Blue: 400 kV Implanter

400 KV Ion Implanter

The instrument is an open air 400 KV ion implanter*, manufactured by National Electrostatics Corp. (NEC-Middleton WI, USA) with an ion source model 921 by Danfysik (Denmark) and an ion implantation stage by High Voltage Engineering Europa (The Netherlands). In this unique design, NEC took the best hardware and technology available on the market and put together a state-of-the-art instrument unique (as of 2008) in the world in terms of characteristics.

The implanter is equipped with a very versatile source (Danfysik)
The implanter is equipped with a very versatile source (Danfysik)
The new implanter (NEC)
The new implanter (NEC)

Capabilities

  • Ion energy range: 10-400 keV 
  • Ion Type: virtually anything from the periodic table of elements
  • Ion current range: in excess of 100’s of uA depending on ion type 
  • Target chamber vacuum: 10 -8 Torr 
  • Sample temperature control: -196°C to 800°C 
  • Sample irradiation area: up to 6 inch2  with 4 wafers loaded simultaneous
  • Uses: ion implantation, ion beam mixing

Implant Station

The Implant stage was built by High Voltage Engineering (HVEE) and allows for irradiations of up to four 6 inch wafers or up to five 4 inch wafer before loading/unloading with a range from liquid nitrogen temperatures to 8000 C.

Inside the chamber: Wafer holder and Faraday cup (HVEE)
Inside the chamber: Wafer holder and Faraday cup (HVEE)

 

Beams, 10 KV to 400 KV
(on the target to date)
H, He, Ne, Ar, N, O, Ar2+, O2+ C, Si, Be, Ce, Pd
Ag, Au, Sm, Te, Co, Ta, W, Cr, Bi, Fe, Ni, Er, In, Nb, S, Cs